PEMB3,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Transistor Application :

SWITCHING

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Min Operating Temperature :

-65°C

Termination :

SMD/SMT

Number of Terminations :

6

hFE Min :

200

Max Operating Temperature :

150°C

Base Part Number :

MB3

Resistor - Base (R1) :

4.7k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

1.7mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

-5V

Terminal Form :

Flat

Width :

1.3mm

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Number of Pins :

6

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Pin Count :

6

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

1μA

Additional Feature :

BUILT-IN BIAS RESISTOR

Package / Case :

SOT-563, SOT-666

Radiation Hardening :

No

Number of Elements :

2

Element Configuration :

Dual

Published :

2009

Collector Emitter Voltage (VCEO) :

50V

Power Dissipation :

300mW

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Height :

600μm

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Saturation Voltage :

100mV

ECCN Code :

EAR99

Weight :

4.535924g