PEMB3,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

JESD-609 Code :

e3

Additional Feature :

BUILT-IN BIAS RESISTOR

Terminal Finish :

Tin (Sn)

Height :

600μm

Terminal Form :

Flat

Resistor - Base (R1) :

4.7k Ω

Max Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Length :

1.7mm

Weight :

4.535924g

Number of Elements :

2

Published :

2009

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

Width :

1.3mm

Min Operating Temperature :

-65°C

Emitter Base Voltage (VEBO) :

-5V

Number of Terminations :

6

Mounting Type :

Surface Mount

Power Dissipation :

300mW

Mount :

Surface Mount

Transistor Type :

2 PNP - Pre-Biased (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Max Power Dissipation :

300mW

Pin Count :

6

Collector Emitter Saturation Voltage :

100mV

Termination :

SMD/SMT

ECCN Code :

EAR99

hFE Min :

200

Package / Case :

SOT-563, SOT-666

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA

Base Part Number :

MB3

Number of Pins :

6