PEMB19,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Supplier Device Package :

SOT-666

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Current - Collector (Ic) (Max) :

100mA

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

1μA

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Base Part Number :

MB19

Max Operating Temperature :

150°C

Resistor - Base (R1) :

22kOhms

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Collector Current :

100mA

Radiation Hardening :

No

Polarity :

PNP

Voltage - Collector Emitter Breakdown (Max) :

50V

Min Operating Temperature :

-65°C

Published :

2009

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Mounting Type :

Surface Mount

Mount :

Surface Mount

Max Power Dissipation :

300mW

Power - Max :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V