PEMB18,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

4.7k Ω

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Element Configuration :

Dual

Published :

2011

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

10k Ω

Current - Collector Cutoff (Max) :

1μA

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

150°C

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 2.1

Mount :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Number of Pins :

6

Max Collector Current :

100mA

Polarity :

PNP

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Transistor Type :

2 PNP - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MB18

Max Power Dissipation :

300mW

Number of Terminations :

6

Pin Count :

6

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V