PDTC124XMB,315

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Mfr.Part #
PDTC124XMB,315
Manufacturer
Nexperia
Package / Case
3-XFDFN
Datasheet
Download
Description
TRANS PREBIAS NPN 50V DFN1006B-3
Stock
9,754
In Stock :
9,754

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Radiation Hardening :
No
Power - Max :
250mW
Factory Lead Time :
8 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 5A 5V
Packaging :
Tape and Reel (TR)
Max Operating Temperature :
150°C
Collector Emitter Voltage (VCEO) :
150mV
Frequency - Transition :
230MHz
Base Part Number :
PDTC124
Current - Collector Cutoff (Max) :
1μA
Mount :
Surface Mount
Resistor - Base (R1) :
22 kOhms
RoHS Status :
ROHS3 Compliant
Published :
2009
Mounting Type :
Surface Mount
Element Configuration :
Single
Max Collector Current :
100mA
Current - Collector (Ic) (Max) :
100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
50V
Supplier Device Package :
DFN1006B-3
Package / Case :
3-XFDFN
Transistor Type :
NPN - Pre-Biased
Number of Pins :
3
Max Power Dissipation :
250mW
Vce Saturation (Max) @ Ib, Ic :
150mV @ 500µA, 10mA
Resistor - Emitter Base (R2) :
47 kOhms
Min Operating Temperature :
-65°C
Voltage - Collector Emitter Breakdown (Max) :
50V
Datasheets
PDTC124XMB,315
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased Nexperia PDTC124XMB,315 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PDTC124, Mounting Type:Surface Mount, Package / Case:3-XFDFN, Number of Pins:3, PDTC124XMB,315 pinout, PDTC124XMB,315 datasheet PDF, PDTC124XMB,315 amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased Nexperia PDTC124XMB,315 ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PDTC124XMB,315


PDTC124XMB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available at

The Nexperia PDTC124XMB,315 is a single, pre-biased bipolar junction transistor (BJT) designed for use in a variety of applications. It is a NPN type transistor with a maximum power dissipation of 250mW and a 3DFN package.

Features of the PDTC124XMB,315 include a low collector-emitter saturation voltage, a high current gain, and a low noise figure. It also has a high switching speed and a wide operating temperature range.

Applications of the PDTC124XMB,315 include power management, audio amplifiers, and motor control. It is also suitable for use in automotive, industrial, and consumer electronics.
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