PDTC124ES,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

PDTC124

Current - Collector (Ic) (Max) :

100mA

Voltage - Collector Emitter Breakdown (Max) :

50V

Polarity/Channel Type :

NPN

Mounting Type :

Through Hole

Power - Max :

500mW

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-30 Code :

O-PBCY-T3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Qualification Status :

Not Qualified

Resistor - Emitter Base (R2) :

22 k Ω

Transistor Element Material :

SILICON

Resistor - Base (R1) :

22 k Ω

ECCN Code :

EAR99

Operating Temperature (Max) :

150°C

Pin Count :

3

Number of Elements :

1

Terminal Position :

BOTTOM

Published :

2009

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Type :

NPN - Pre-Biased

Number of Terminations :

3

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Packaging :

Tape and Box (TB)

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin