PDTC123EMB

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Resistor - Base (R1) :

2.2 k Ω

Pin Count :

3

Number of Terminations :

3

Transistor Type :

NPN - Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Radiation Hardening :

No

Number of Elements :

1

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Case Connection :

COLLECTOR

Max Operating Temperature :

150°C

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Resistor - Emitter Base (R2) :

2.2 k Ω

Transition Frequency :

230MHz

Max Power Dissipation :

250mW

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-65°C

Published :

2009

Transistor Application :

SWITCHING

Frequency - Transition :

230MHz

Terminal Finish :

Tin (Sn)

Base Part Number :

PDTC123

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

150mV

JESD-609 Code :

e3

Package / Case :

3-XFDFN

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

1μA

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)