PDTC115EMB

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

Package / Case :

3-XFDFN

Collector Emitter Voltage (VCEO) :

150mV

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

20mA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Min Operating Temperature :

-65°C

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

250mW

Base Part Number :

PDTC115

Transistor Type :

NPN - Pre-Biased

Terminal Form :

NO LEAD

Transition Frequency :

230MHz

Number of Elements :

1

Resistor - Emitter Base (R2) :

100 k Ω

Resistor - Base (R1) :

100 k Ω

Frequency - Transition :

230MHz

Max Operating Temperature :

150°C

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Mount :

Surface Mount

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

1μA

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Mounting Type :

Surface Mount

Number of Terminations :

3