PDTC114YQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Reference Standard :

AEC-Q101; IEC-60134

Collector Emitter Voltage (VCEO) :

100mV

Published :

2014

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Terminal Position :

Dual

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Case Connection :

COLLECTOR

Package / Case :

3-XDFN Exposed Pad

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Number of Elements :

1

Factory Lead Time :

4 Weeks

Series :

Automotive, AEC-Q101

Power - Max :

280mW

Pin Count :

3

Frequency - Transition :

230MHz

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-N3

Max Power Dissipation :

280mW

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transition Frequency :

230MHz

Max Collector Current :

100mA

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

Current - Collector Cutoff (Max) :

1μA

Resistor - Base (R1) :

10 k Ω

Transistor Type :

NPN - Pre-Biased

Resistor - Emitter Base (R2) :

47 k Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED