PD20015S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain Current-Max (Abs) (ID) :

7A

Terminal Position :

Dual

Pin Count :

10

Operating Mode :

ENHANCEMENT MODE

Max Output Power :

23W

Mount :

Surface Mount

Case Connection :

SOURCE

Frequency :

2GHz

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Gain :

11dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

79W

Max Operating Temperature :

165°C

JESD-30 Code :

R-PDFM-F2

Gate to Source Voltage (Vgs) :

15V

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-65°C

Power - Output :

15W

Power Dissipation :

79W

Polarity/Channel Type :

N-Channel

Base Part Number :

PD20015

Continuous Drain Current (ID) :

7A

Number of Pins :

4

Package / Case :

PowerSO-10 Exposed Bottom Pad

Qualification Status :

Not Qualified

Voltage - Test :

13.6V

Number of Elements :

1

Number of Terminations :

2

Current Rating :

7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Flat

Transistor Type :

LDMOS

Current - Test :

350mA

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

40V

Additional Feature :

High Reliability

Element Configuration :

Single