PD20010STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

SOURCE

Power Dissipation :

59W

Number of Terminations :

2

Number of Elements :

1

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Frequency :

2GHz

Max Output Power :

15W

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

150°C

Transistor Type :

LDMOS

Drain to Source Voltage (Vdss) :

40V

Min Operating Temperature :

-65°C

Number of Pins :

3

Mount :

Surface Mount

Max Power Dissipation :

59W

Polarity/Channel Type :

N-Channel

Voltage - Test :

13.6V

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Current - Test :

150mA

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

15V

Power - Output :

10W

Base Part Number :

PD20010

Continuous Drain Current (ID) :

5A

Terminal Form :

Flat

Current Rating :

5A

Gain :

11dB

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Drain Current-Max (Abs) (ID) :

5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

10

JESD-30 Code :

R-PDFP-F2

Element Configuration :

Single