PD20010-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Current - Test :

150mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Element Configuration :

Single

Continuous Drain Current (ID) :

5A

Base Part Number :

PD20010

Terminal Form :

Gull wing

Number of Terminations :

2

Gain :

11dB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

5A

Number of Pins :

3

Number of Elements :

1

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Terminal Position :

Dual

Packaging :

Tube

Frequency :

2GHz

Voltage - Test :

13.6V

Factory Lead Time :

25 Weeks

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

15V

Transistor Type :

LDMOS

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Power Dissipation :

59W

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

10

Drain to Source Voltage (Vdss) :

40V

Drain Current-Max (Abs) (ID) :

5A

Max Operating Temperature :

165°C

Case Connection :

SOURCE

Power - Output :

10W

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-65°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Output Power :

15W

Qualification Status :

Not Qualified

Max Power Dissipation :

59W

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G2

Operating Mode :

ENHANCEMENT MODE