PD20010-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Breakdown Voltage :

40V

Voltage - Test :

13.6V

Min Operating Temperature :

-65°C

Current Rating :

5A

Transistor Type :

LDMOS

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Frequency :

2GHz

Drain to Source Voltage (Vdss) :

40V

Element Configuration :

Single

Current - Test :

150mA

Gate to Source Voltage (Vgs) :

15V

Packaging :

Tube

Continuous Drain Current (ID) :

5A

Base Part Number :

PD20010

ECCN Code :

EAR99

Mount :

Surface Mount

Power Dissipation :

59W

Factory Lead Time :

25 Weeks

Max Operating Temperature :

165°C

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Gain :

11dB

Max Output Power :

15W

Terminal Form :

Gull wing

Terminal Position :

Dual

Number of Pins :

3

Power - Output :

10W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

JESD-30 Code :

R-PDSO-G2

Transistor Application :

AMPLIFIER

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Case Connection :

SOURCE

Max Power Dissipation :

59W

Pin Count :

10