PD20015-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Packaging :

Tube

Voltage - Test :

13.6V

Gain :

11dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Mount :

Surface Mount

Number of Elements :

1

Pin Count :

10

Min Operating Temperature :

-65°C

Drain to Source Breakdown Voltage :

40V

Base Part Number :

PD20015

Drain to Source Voltage (Vdss) :

40V

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

Max Power Dissipation :

79W

Transistor Type :

LDMOS

Case Connection :

SOURCE

Frequency :

2GHz

Continuous Drain Current (ID) :

7A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Test :

350mA

Power - Output :

15W

Drain Current-Max (Abs) (ID) :

7A

Power Dissipation :

79W

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Number of Pins :

3

Factory Lead Time :

25 Weeks

Transistor Application :

AMPLIFIER

Gate to Source Voltage (Vgs) :

15V

Current Rating :

7A

Terminal Position :

Dual

Additional Feature :

High Reliability

Max Operating Temperature :

165°C

Radiation Hardening :

No

JESD-30 Code :

R-PDFM-G2

Number of Terminations :

2

Max Output Power :

23W

RoHS Status :

ROHS3 Compliant