PD20015-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation :

79W

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Max Output Power :

23W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Current Rating :

7A

Gain :

11dB

Continuous Drain Current (ID) :

7A

Base Part Number :

PD20015

Pin Count :

10

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDFM-G2

Gate to Source Voltage (Vgs) :

15V

Additional Feature :

High Reliability

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Transistor Type :

LDMOS

Element Configuration :

Single

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Min Operating Temperature :

-65°C

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Voltage - Test :

13.6V

Current - Test :

350mA

Drain to Source Voltage (Vdss) :

40V

Number of Terminations :

2

Number of Pins :

3

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Case Connection :

SOURCE

Frequency :

2GHz

Factory Lead Time :

25 Weeks

Max Power Dissipation :

79W

Power - Output :

15W

Mount :

Surface Mount

Max Operating Temperature :

165°C

Drain to Source Breakdown Voltage :

40V

Drain Current-Max (Abs) (ID) :

7A