PD20010S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation :

59W

Max Operating Temperature :

165°C

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

5A

Drain to Source Breakdown Voltage :

40V

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Current Rating :

5A

RoHS Status :

ROHS3 Compliant

Frequency :

2GHz

Pin Count :

10

ECCN Code :

EAR99

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

AMPLIFIER

Terminal Form :

Flat

Transistor Type :

LDMOS

Continuous Drain Current (ID) :

5A

Min Operating Temperature :

-65°C

Gain :

11dB

Drain to Source Voltage (Vdss) :

40V

Case Connection :

SOURCE

Base Part Number :

PD20010

JESD-30 Code :

R-PDFP-F2

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Max Output Power :

15W

Number of Pins :

3

Gate to Source Voltage (Vgs) :

15V

Power - Output :

10W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Max Power Dissipation :

59W

Current - Test :

150mA

Voltage - Test :

13.6V