PD20010S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Base Part Number :

PD20010

Power Dissipation :

59W

Current Rating :

5A

Max Operating Temperature :

165°C

Number of Terminations :

2

JESD-30 Code :

R-PDFP-F2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5A

Gate to Source Voltage (Vgs) :

15V

Gain :

11dB

Max Output Power :

15W

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Transistor Type :

LDMOS

Power - Output :

10W

Min Operating Temperature :

-65°C

Pin Count :

10

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Drain to Source Breakdown Voltage :

40V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Continuous Drain Current (ID) :

5A

Voltage - Test :

13.6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Packaging :

Tube

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

AMPLIFIER

Case Connection :

SOURCE

Max Power Dissipation :

59W

Frequency :

2GHz

Mount :

Surface Mount

Terminal Form :

Flat

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

40V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current - Test :

150mA