PD20010S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Operating Temperature :

165°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Current - Test :

150mA

Drain to Source Voltage (Vdss) :

40V

Power - Output :

10W

JESD-30 Code :

R-PDFP-F2

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Max Power Dissipation :

59W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

SOURCE

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Transistor Type :

LDMOS

ECCN Code :

EAR99

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Current Rating :

5A

Gate to Source Voltage (Vgs) :

15V

Frequency :

2GHz

Polarity/Channel Type :

N-Channel

Base Part Number :

PD20010

Number of Elements :

1

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation :

59W

Gain :

11dB

Pin Count :

10

Terminal Position :

Dual

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

5A

Terminal Form :

Flat

Number of Terminations :

2

Voltage - Test :

13.6V

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-65°C

Max Output Power :

15W

Continuous Drain Current (ID) :

5A