PD20010S-E
- Mfr.Part #
- PD20010S-E
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
- Datasheet
- Download
- Description
- TRANS RF N-CH FET POWERSO-10RF
- Stock
- 3,945
- In Stock :
- 3,945
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- SOURCE
- Drain to Source Breakdown Voltage :
- 40V
- Gate to Source Voltage (Vgs) :
- 15V
- Polarity/Channel Type :
- N-Channel
- Mount :
- Surface Mount
- Additional Feature :
- ESD PROTECTION, HIGH RELIABILITY
- Terminal Form :
- Flat
- Current Rating :
- 5A
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Power - Output :
- 10W
- JESD-30 Code :
- R-PDFP-F2
- Current - Test :
- 150mA
- Terminal Position :
- Dual
- Pin Count :
- 10
- Continuous Drain Current (ID) :
- 5A
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Transistor Type :
- LDMOS
- Power Dissipation :
- 59W
- Gain :
- 11dB
- Base Part Number :
- PD20010
- Voltage - Test :
- 13.6V
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Output Power :
- 15W
- Drain Current-Max (Abs) (ID) :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Max Power Dissipation :
- 59W
- Frequency :
- 2GHz
- Package / Case :
- PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Min Operating Temperature :
- -65°C
- Drain to Source Voltage (Vdss) :
- 40V
- Max Operating Temperature :
- 165°C
- Datasheets
- PD20010S-E
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PD20010S-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
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