PD20010S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

SOURCE

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

15V

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Terminal Form :

Flat

Current Rating :

5A

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Power - Output :

10W

JESD-30 Code :

R-PDFP-F2

Current - Test :

150mA

Terminal Position :

Dual

Pin Count :

10

Continuous Drain Current (ID) :

5A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Type :

LDMOS

Power Dissipation :

59W

Gain :

11dB

Base Part Number :

PD20010

Voltage - Test :

13.6V

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Output Power :

15W

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Number of Elements :

1

Max Power Dissipation :

59W

Frequency :

2GHz

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Min Operating Temperature :

-65°C

Drain to Source Voltage (Vdss) :

40V

Max Operating Temperature :

165°C