PD20010S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Drain to Source Breakdown Voltage :

40V

Voltage - Test :

13.6V

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Current - Test :

150mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

SOURCE

Gate to Source Voltage (Vgs) :

15V

Max Power Dissipation :

59W

Frequency :

2GHz

Max Operating Temperature :

165°C

Element Configuration :

Single

Terminal Position :

Dual

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Drain Current-Max (Abs) (ID) :

5A

Continuous Drain Current (ID) :

5A

Pin Count :

10

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

40V

Transistor Type :

LDMOS

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Power Dissipation :

59W

Packaging :

Tube

Max Output Power :

15W

JESD-30 Code :

R-PDFP-F2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Flat

Transistor Application :

AMPLIFIER

Number of Pins :

3

Base Part Number :

PD20010

Mount :

Surface Mount

Power - Output :

10W

Gain :

11dB

Current Rating :

5A