PD20010TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Element Configuration :

Single

Terminal Position :

Dual

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Factory Lead Time :

25 Weeks

Case Connection :

SOURCE

Current - Test :

150mA

Drain to Source Breakdown Voltage :

40V

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

15V

Transistor Type :

LDMOS

Number of Elements :

1

Transistor Application :

AMPLIFIER

Current Rating :

5A

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Power - Output :

10W

Max Power Dissipation :

59W

Voltage - Test :

13.6V

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G2

Gain :

11dB

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

5A

Number of Terminations :

2

Frequency :

2GHz

Base Part Number :

PD20010

Max Operating Temperature :

150°C

Mount :

Surface Mount

Power Dissipation :

59W

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Output Power :

15W

Number of Pins :

3

Min Operating Temperature :

-65°C