PD20010TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

15V

Max Power Dissipation :

59W

Terminal Position :

Dual

Base Part Number :

PD20010

Transistor Application :

AMPLIFIER

Current Rating :

5A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Voltage - Test :

13.6V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Packaging :

Tape and Reel (TR)

Max Output Power :

15W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Frequency :

2GHz

Terminal Form :

Gull wing

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

25 Weeks

Continuous Drain Current (ID) :

5A

Case Connection :

SOURCE

Number of Pins :

3

Mount :

Surface Mount

Gain :

11dB

JESD-30 Code :

R-PDSO-G2

Qualification Status :

Not Qualified

Power - Output :

10W

Max Operating Temperature :

150°C

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Pin Count :

10

Min Operating Temperature :

-65°C

Drain to Source Voltage (Vdss) :

40V

Current - Test :

150mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Number of Terminations :

2

Transistor Type :

LDMOS

Power Dissipation :

59W