PD20010TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation :

59W

Drain to Source Voltage (Vdss) :

40V

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

5A

Polarity/Channel Type :

N-Channel

Transistor Type :

LDMOS

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

15V

Pin Count :

10

Number of Pins :

3

Factory Lead Time :

25 Weeks

JESD-30 Code :

R-PDSO-G2

Current - Test :

150mA

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Gain :

11dB

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Frequency :

2GHz

Qualification Status :

Not Qualified

Max Power Dissipation :

59W

Number of Elements :

1

Max Output Power :

15W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power - Output :

10W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Case Connection :

SOURCE

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Voltage - Test :

13.6V

Element Configuration :

Single

Current Rating :

5A

Base Part Number :

PD20010

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

5A