PBSS9110Z,135

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Mfr.Part #
PBSS9110Z,135
Manufacturer
Nexperia
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 100V 1A SOT223
Stock
35,010
In Stock :
35,010

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Width :
6.35mm
Current - Collector Cutoff (Max) :
100nA
Test Current :
5mA
Transistor Type :
PNP
Transistor Application :
SWITCHING
Case Connection :
COLLECTOR
Polarity/Channel Type :
PNP
Package / Case :
TO-261-4, TO-261AA
Terminal Position :
Dual
REACH SVHC :
No SVHC
Number of Terminations :
4
Factory Lead Time :
4 Weeks
Gain Bandwidth Product :
100MHz
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
100V
JESD-609 Code :
e3
Max Collector Current :
1A
Mount :
Surface Mount
Max Breakdown Voltage :
100V
Terminal Form :
Gull wing
Frequency :
100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 500mA 5V
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
320mV @ 100mA, 1A
Operating Temperature :
150°C TJ
Max Power Dissipation :
1.4W
Length :
12.7mm
Number of Pins :
4
Published :
2003
Transistor Element Material :
SILICON
Zener Voltage :
20V
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Height :
6.35mm
Number of Elements :
1
Tolerance :
5%
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
40
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Base Part Number :
PBSS9110
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Collector Base Voltage (VCBO) :
120V
Weight :
4.535924g
Power Dissipation :
1.4W
Transition Frequency :
100MHz
Pin Count :
4
Collector Emitter Breakdown Voltage :
100V
Peak Reflow Temperature (Cel) :
260
Datasheets
PBSS9110Z,135
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS9110Z,135 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Operating Temperature:150°C TJ, Number of Pins:4, Base Part Number:PBSS9110, Mounting Type:Surface Mount, PBSS9110Z,135 pinout, PBSS9110Z,135 datasheet PDF, PBSS9110Z,135 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS9110Z,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS9110Z,135


PNP 150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS9110Z,135 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 320mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

PBSS9110Z,135 Features


the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


PBSS9110Z,135 Applications


There are a lot of Nexperia USA Inc.
PBSS9110Z,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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