PBSS9110T,215
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- Mfr.Part #
- PBSS9110T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A TO236AB
- Stock
- 37,374
- In Stock ：
- 37,374
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 320mV
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 120V
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Power Dissipation :
- 480mW
- Published :
- 2001
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 480mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Length :
- 3mm
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Tolerance :
- 5%
- hFE Min :
- 150
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Pin Count :
- 3
- Test Current :
- 5mA
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- SWITCHING
- Weight :
- 4.535924g
- Base Part Number :
- PBSS9110
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 100V
- Zener Voltage :
- 16V
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Datasheets
- PBSS9110T,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS9110T,215 Overview
DC current gain in this device equals 150 @ 500mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 320mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS9110T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS9110T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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