PBSS9110AS,126
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- Mfr.Part #
- PBSS9110AS,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A TO92-3
- Stock
- 16,216
- In Stock ：
- 16,216
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Power - Max :
- 830mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- PBSS9110
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- PBSS9110AS,126
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PBSS9110AS,126 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
PBSS9110AS,126 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
PBSS9110AS,126 Applications
There are a lot of NXP USA Inc.
PBSS9110AS,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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