PBSS8510PA,115
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- Mfr.Part #
- PBSS8510PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.2A 3HUSON
- Stock
- 5,834
- In Stock ：
- 5,834
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- 3-PowerUDFN
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 260mA, 5.2A
- Element Configuration :
- Single
- Power Dissipation :
- 2.1W
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- hFE Min :
- 30
- Number of Pins :
- 3
- Max Power Dissipation :
- 2.1W
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 150MHz
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 5.2A
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2010
- Radiation Hardening :
- No
- Transition Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- PBSS8510
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 95 @ 2A 2V
- Lead Free :
- Lead Free
- Datasheets
- PBSS8510PA,115
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS8510PA,115 Overview
DC current gain in this device equals 95 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 340mV @ 260mA, 5.2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 5.2A volts.
PBSS8510PA,115 Features
the DC current gain for this device is 95 @ 2A 2V
the vce saturation(Max) is 340mV @ 260mA, 5.2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
PBSS8510PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS8510PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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