PBSS8510PA,115
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- Mfr.Part #
- PBSS8510PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.2A 3HUSON
- Stock
- 5,834
- In Stock ：
- 5,834
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2.1W
- Collector Base Voltage (VCBO) :
- 100V
- Max Collector Current :
- 5.2A
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 260mA, 5.2A
- Max Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 95 @ 2A 2V
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- SWITCHING
- hFE Min :
- 30
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- 3-PowerUDFN
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Frequency :
- 150MHz
- Transistor Type :
- NPN
- Published :
- 2010
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Power Dissipation :
- 2.1W
- Transition Frequency :
- 150MHz
- Base Part Number :
- PBSS8510
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PBSS8510PA,115
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS8510PA,115 Overview
DC current gain in this device equals 95 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 340mV @ 260mA, 5.2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 5.2A volts.
PBSS8510PA,115 Features
the DC current gain for this device is 95 @ 2A 2V
the vce saturation(Max) is 340mV @ 260mA, 5.2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
PBSS8510PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS8510PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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