PBSS8510PA,115
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- Mfr.Part #
- PBSS8510PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.2A 3HUSON
- Stock
- 5,834
- In Stock ：
- 5,834
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 95 @ 2A 2V
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 100V
- hFE Min :
- 30
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Number of Terminations :
- 3
- Power Dissipation :
- 2.1W
- Transition Frequency :
- 150MHz
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Published :
- 2010
- Max Power Dissipation :
- 2.1W
- Gain Bandwidth Product :
- 150MHz
- Package / Case :
- 3-PowerUDFN
- Max Collector Current :
- 5.2A
- Max Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 260mA, 5.2A
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 100V
- Mount :
- Surface Mount
- Base Part Number :
- PBSS8510
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Datasheets
- PBSS8510PA,115
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS8510PA,115 Overview
DC current gain in this device equals 95 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 340mV @ 260mA, 5.2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 5.2A volts.
PBSS8510PA,115 Features
the DC current gain for this device is 95 @ 2A 2V
the vce saturation(Max) is 340mV @ 260mA, 5.2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
PBSS8510PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS8510PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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