PBSS8510PA,115
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- Mfr.Part #
- PBSS8510PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.2A 3HUSON
- Stock
- 5,834
- In Stock ：
- 5,834
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 95 @ 2A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 260mA, 5.2A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 150MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Base Part Number :
- PBSS8510
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 8 Weeks
- hFE Min :
- 30
- Max Collector Current :
- 5.2A
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 100V
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 150MHz
- Power Dissipation :
- 2.1W
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 100V
- Published :
- 2010
- Frequency :
- 150MHz
- Package / Case :
- 3-PowerUDFN
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 2.1W
- Datasheets
- PBSS8510PA,115
PBSS8510PA,115 Documents
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS8510PA,115 Overview
DC current gain in this device equals 95 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 340mV @ 260mA, 5.2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 5.2A volts.
PBSS8510PA,115 Features
the DC current gain for this device is 95 @ 2A 2V
the vce saturation(Max) is 340mV @ 260mA, 5.2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
PBSS8510PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS8510PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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