PBSS8110Z,135

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Mfr.Part #
PBSS8110Z,135
Manufacturer
NXP Semiconductors
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 100V 1A SOT223
Stock
24,155
In Stock :
24,155

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Manufacturer :
NXP Semiconductors
Product Category :
Unclassified
Collector Emitter Breakdown Voltage :
100V
Operating Temperature :
150°C TJ
Published :
2003
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Frequency :
100MHz
Gain Bandwidth Product :
100MHz
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Terminal Form :
Gull wing
Case Connection :
COLLECTOR
Terminal Position :
Dual
Length :
6.7mm
Factory Lead Time :
4 Weeks
JESD-609 Code :
e3
Number of Terminations :
4
Base Part Number :
PBSS8110
Package / Case :
TO-261-4, TO-261AA
Packaging :
Tape and Reel (TR)
Collector Emitter Saturation Voltage :
200mV
Transition Frequency :
100MHz
Number of Pins :
4
Transistor Element Material :
SILICON
Height :
1.7mm
Voltage :
100V
Number of Elements :
1
Width :
3.7mm
Mount :
Surface Mount
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
5V
Max Breakdown Voltage :
100V
Max Collector Current :
1A
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
200mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 250mA 10V
Collector Base Voltage (VCBO) :
120V
Current :
1A
Collector Emitter Voltage (VCEO) :
100V
Pin Count :
4
Peak Reflow Temperature (Cel) :
260
Max Power Dissipation :
1.4W
ECCN Code :
EAR99
Power Dissipation :
1.4W
Transistor Type :
NPN
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100nA
Time@Peak Reflow Temperature-Max (s) :
30
Datasheets
PBSS8110Z,135
Introducing Unclassified NXP Semiconductors PBSS8110Z,135 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:4, Base Part Number:PBSS8110, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Voltage:100V, PBSS8110Z,135 pinout, PBSS8110Z,135 datasheet PDF, PBSS8110Z,135 amp .Beyond Unclassified NXP Semiconductors PBSS8110Z,135 ,we also offer 5801925, F-631, 47480-0001, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS8110Z,135


NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS8110Z,135 Overview


In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

PBSS8110Z,135 Features


the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


PBSS8110Z,135 Applications


There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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