PBSS8110Z,135
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- Mfr.Part #
- PBSS8110Z,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT223
- Stock
- 24,155
- In Stock ：
- 24,155
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Max Breakdown Voltage :
- 100V
- Length :
- 6.7mm
- Height :
- 1.7mm
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Current :
- 1A
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Voltage :
- 100V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 3.7mm
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 120V
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.4W
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.4W
- Number of Pins :
- 4
- Published :
- 2003
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Base Part Number :
- PBSS8110
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 200mV
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS8110Z,135
SOT223-1.jpg)
NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS8110Z,135 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS8110Z,135 Features
the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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