PBSS8110Z,135
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- Mfr.Part #
- PBSS8110Z,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT223
- Stock
- 24,155
- In Stock ：
- 24,155
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 1.4W
- Transition Frequency :
- 100MHz
- Length :
- 6.7mm
- Number of Terminations :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Element Configuration :
- Single
- Pin Count :
- 4
- Base Part Number :
- PBSS8110
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 100V
- Current :
- 1A
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Finish :
- Tin (Sn)
- Height :
- 1.7mm
- Collector Base Voltage (VCBO) :
- 120V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2003
- Max Power Dissipation :
- 1.4W
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Voltage :
- 100V
- Datasheets
- PBSS8110Z,135
SOT223-1.jpg)
NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS8110Z,135 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS8110Z,135 Features
the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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