PBSS8110Z,135
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- Mfr.Part #
- PBSS8110Z,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT223
- Stock
- 24,155
- In Stock ：
- 24,155
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Length :
- 6.7mm
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Base Part Number :
- PBSS8110
- Package / Case :
- TO-261-4, TO-261AA
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 200mV
- Transition Frequency :
- 100MHz
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Height :
- 1.7mm
- Voltage :
- 100V
- Number of Elements :
- 1
- Width :
- 3.7mm
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 100V
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Collector Base Voltage (VCBO) :
- 120V
- Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 100V
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1.4W
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.4W
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- PBSS8110Z,135
SOT223-1.jpg)
NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS8110Z,135 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS8110Z,135 Features
the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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