PBSS8110Z,135
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- Mfr.Part #
- PBSS8110Z,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT223
- Stock
- 24,155
- In Stock ：
- 24,155
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Published :
- 2003
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Length :
- 6.7mm
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.7mm
- Radiation Hardening :
- No
- Base Part Number :
- PBSS8110
- Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 100V
- Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Number of Pins :
- 4
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.4W
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 120V
- Package / Case :
- TO-261-4, TO-261AA
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.4W
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 200mV
- Frequency :
- 100MHz
- Height :
- 1.7mm
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS8110Z,135
SOT223-1.jpg)
NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS8110Z,135 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS8110Z,135 Features
the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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