PBSS8110Z,135
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- Mfr.Part #
- PBSS8110Z,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT223
- Stock
- 24,155
- In Stock ：
- 24,155
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Radiation Hardening :
- No
- Published :
- 2003
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Emitter Voltage (VCEO) :
- 100V
- Length :
- 6.7mm
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Frequency :
- 100MHz
- Current :
- 1A
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 1A
- Height :
- 1.7mm
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Power Dissipation :
- 1.4W
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 100V
- Base Part Number :
- PBSS8110
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Voltage :
- 100V
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- Width :
- 3.7mm
- Max Power Dissipation :
- 1.4W
- Max Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 120V
- Datasheets
- PBSS8110Z,135
SOT223-1.jpg)
NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS8110Z,135 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS8110Z,135 Features
the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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