PBSS8110Z,135

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Mfr.Part #
PBSS8110Z,135
Manufacturer
Nexperia
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 100V 1A SOT223
Stock
25,288
In Stock :
25,288

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
120V
Operating Temperature :
150°C TJ
Max Collector Current :
1A
Mount :
Surface Mount
Published :
2003
Terminal Position :
Dual
Package / Case :
TO-261-4, TO-261AA
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
100V
Current :
1A
Gain Bandwidth Product :
100MHz
Collector Emitter Saturation Voltage :
200mV
Case Connection :
COLLECTOR
Transition Frequency :
100MHz
Width :
3.7mm
Frequency :
100MHz
Packaging :
Tape and Reel (TR)
Power Dissipation :
1.4W
Terminal Form :
Gull wing
Number of Pins :
4
Base Part Number :
PBSS8110
Max Power Dissipation :
1.4W
Transistor Element Material :
SILICON
Polarity/Channel Type :
NPN
Element Configuration :
Single
Number of Terminations :
4
Pin Count :
4
Transistor Application :
SWITCHING
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100nA
JESD-609 Code :
e3
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Vce Saturation (Max) @ Ib, Ic :
200mV @ 100mA, 1A
Length :
6.7mm
Collector Emitter Breakdown Voltage :
100V
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
4 Weeks
Height :
1.7mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 250mA 10V
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Type :
NPN
Max Breakdown Voltage :
100V
Voltage :
100V
Datasheets
PBSS8110Z,135
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS8110Z,135 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Number of Pins:4, Base Part Number:PBSS8110, Number of Terminations:4, Voltage:100V, PBSS8110Z,135 pinout, PBSS8110Z,135 datasheet PDF, PBSS8110Z,135 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS8110Z,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS8110Z,135


NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS8110Z,135 Overview


In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

PBSS8110Z,135 Features


the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


PBSS8110Z,135 Applications


There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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