PBSS8110Z,135
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- Mfr.Part #
- PBSS8110Z,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT223
- Stock
- 25,288
- In Stock ：
- 25,288
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 120V
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 1.4W
- Width :
- 3.7mm
- Base Part Number :
- PBSS8110
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 200mV
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.4W
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Terminal Form :
- Gull wing
- Published :
- 2003
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Length :
- 6.7mm
- Max Breakdown Voltage :
- 100V
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Height :
- 1.7mm
- Current :
- 1A
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 1A
- Frequency :
- 100MHz
- Pin Count :
- 4
- Datasheets
- PBSS8110Z,135
NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS8110Z,135 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS8110Z,135 Features
the DC current gain for this device is 150 @ 250mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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