PBSS8110Y,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

200mV @ 100mA, 1A

Power Dissipation :

625mW

Max Breakdown Voltage :

100V

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Length :

6.35mm

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.35mm

Height :

6.35mm

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

100MHz

Max Power Dissipation :

625mW

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

100V

Number of Pins :

6

Max Collector Current :

1A

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Published :

2009

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Weight :

4.535924g

Transistor Type :

NPN

Number of Elements :

1

Base Part Number :

PBSS8110

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA

Collector Base Voltage (VCBO) :

120V

Frequency :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 250mA 10V

Collector Emitter Voltage (VCEO) :

100V

Number of Terminations :

6

Gain Bandwidth Product :

100MHz

Mount :

Surface Mount

Element Configuration :

Single

Pin Count :

6