PBSS8110Y,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

200mV @ 100mA, 1A

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Frequency :

100MHz

Terminal Position :

Dual

Number of Elements :

1

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Max Power Dissipation :

625mW

Collector Base Voltage (VCBO) :

120V

Width :

6.35mm

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Base Part Number :

PBSS8110

Power Dissipation :

625mW

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks

Transition Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

100V

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 250mA 10V

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

Number of Pins :

6

Element Configuration :

Single

Mount :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Length :

6.35mm

Height :

6.35mm

Max Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA

Gain Bandwidth Product :

100MHz

Published :

2009

Max Collector Current :

1A

Collector Emitter Voltage (VCEO) :

100V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6