PBSS8110Y,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

625mW

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA

Length :

6.35mm

Frequency :

100MHz

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

120V

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 250mA 10V

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Base Part Number :

PBSS8110

Transition Frequency :

100MHz

Gain Bandwidth Product :

100MHz

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminations :

6

Number of Pins :

6

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

100V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

100V

Lead Free :

Lead Free

Width :

6.35mm

Max Breakdown Voltage :

100V

Max Collector Current :

1A

Weight :

4.535924g

Radiation Hardening :

No

Height :

6.35mm

Transistor Type :

NPN

Number of Elements :

1

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

200mV @ 100mA, 1A

Transistor Application :

SWITCHING

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Published :

2009

Power Dissipation :

625mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON