PBSS8110T,215
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- Mfr.Part #
- PBSS8110T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A TO236AB
- Stock
- 149,237
- In Stock ：
- 149,237
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 1A
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Base Part Number :
- PBSS8110
- Peak Reflow Temperature (Cel) :
- 260
- Frequency - Transition :
- 100MHz
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Power - Max :
- 480mW
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Published :
- 2001
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Datasheets
- PBSS8110T,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS8110T,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 250mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS8110T,215 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz
PBSS8110T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS8110T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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