PBSS5630PA,115
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- Mfr.Part #
- PBSS5630PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS5630PA - SMALL SIGN
- Stock
- 2,227
- In Stock ：
- 2,227
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 2.1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- -7V
- Published :
- 2010
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 300mA, 6A
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 110
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Frequency :
- 80MHz
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 6A
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 2.1W
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 80MHz
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Package / Case :
- 3-PowerUDFN
- Transistor Type :
- PNP
- Base Part Number :
- PBSS5630
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 30V
- Transition Frequency :
- 80MHz
- Element Configuration :
- Single
- Datasheets
- PBSS5630PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5630PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 350mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 80MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS5630PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 80MHz
PBSS5630PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5630PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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