PBSS5630PA,115
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- Mfr.Part #
- PBSS5630PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 30V 6A 3HUSON
- Stock
- 2,227
- In Stock ：
- 2,227
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-PowerUDFN
- Pin Count :
- 3
- Published :
- 2010
- Max Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Frequency :
- 80MHz
- Max Collector Current :
- 6A
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 2.1W
- Collector Base Voltage (VCBO) :
- 30V
- Max Power Dissipation :
- 2.1W
- JESD-609 Code :
- e3
- Transition Frequency :
- 80MHz
- Polarity/Channel Type :
- PNP
- hFE Min :
- 110
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 300mA, 6A
- Emitter Base Voltage (VEBO) :
- -7V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 80MHz
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- Base Part Number :
- PBSS5630
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Datasheets
- PBSS5630PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5630PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 350mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 80MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS5630PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 80MHz
PBSS5630PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5630PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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