PBSS5630PA,115
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- Mfr.Part #
- PBSS5630PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 30V 6A 3HUSON
- Stock
- 2,227
- In Stock ：
- 2,227
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 2.1W
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 80MHz
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 300mA, 6A
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Package / Case :
- 3-PowerUDFN
- Max Breakdown Voltage :
- 30V
- Transition Frequency :
- 80MHz
- Max Power Dissipation :
- 2.1W
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Published :
- 2010
- hFE Min :
- 110
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Base Voltage (VCBO) :
- 30V
- Frequency :
- 80MHz
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Collector Current :
- 6A
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Base Part Number :
- PBSS5630
- Datasheets
- PBSS5630PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5630PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 350mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 80MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS5630PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 80MHz
PBSS5630PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5630PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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