PBSS5630PA,115
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- Mfr.Part #
- PBSS5630PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 30V 6A 3HUSON
- Stock
- 2,227
- In Stock ：
- 2,227
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 6A
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 80MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 80MHz
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Package / Case :
- 3-PowerUDFN
- Collector Emitter Voltage (VCEO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Gain Bandwidth Product :
- 80MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 300mA, 6A
- Transistor Application :
- SWITCHING
- Published :
- 2010
- hFE Min :
- 110
- Number of Terminations :
- 3
- Max Power Dissipation :
- 2.1W
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS5630
- Emitter Base Voltage (VEBO) :
- -7V
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.1W
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Pin Count :
- 3
- Terminal Position :
- Dual
- Datasheets
- PBSS5630PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5630PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 350mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 80MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS5630PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 80MHz
PBSS5630PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5630PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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