PBSS5620PA,115
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- Mfr.Part #
- PBSS5620PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS5620PA - SMALL SIGN
- Stock
- 416,515
- In Stock ：
- 416,515
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -7V
- Power Dissipation :
- 2.1W
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 20V
- Package / Case :
- 3-PowerUDFN
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 80MHz
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 20V
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 6A
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2.1W
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 300mA, 6A
- Current - Collector Cutoff (Max) :
- 100nA
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 20V
- Pin Count :
- 3
- Transition Frequency :
- 80MHz
- Frequency :
- 80MHz
- Base Part Number :
- PBSS5620
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Published :
- 2010
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 110
- Datasheets
- PBSS5620PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5620PA,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 190 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 300mA, 6A.The emitter base voltage can be kept at -7V for high efficiency.The part has a transition frequency of 80MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
PBSS5620PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 80MHz
PBSS5620PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5620PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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