PBSS5560PA,115
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- Mfr.Part #
- PBSS5560PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A 3HUSON
- Stock
- 2,800
- In Stock ：
- 2,800
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 90
- Collector Emitter Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Published :
- 2010
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 2V
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 2.1W
- Base Part Number :
- PBSS5560
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Power Dissipation :
- 2.1W
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 250mA, 5A
- Transition Frequency :
- 90MHz
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Package / Case :
- 3-PowerUDFN
- Emitter Base Voltage (VEBO) :
- -7V
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Frequency :
- 90MHz
- Gain Bandwidth Product :
- 90MHz
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Turn On Time-Max (ton) :
- 88ns
- Datasheets
- PBSS5560PA,115
PBSS5560PA,115 Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5560PA,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -7V can result in a high level of efficiency.There is a transition frequency of 90MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 5A volts.
PBSS5560PA,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 450mV @ 250mA, 5A
the emitter base voltage is kept at -7V
a transition frequency of 90MHz
PBSS5560PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5560PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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