PBSS5540X,135

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Mfr.Part #
PBSS5540X,135
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 40V 4A SOT89
Stock
10,899
In Stock :
10,899

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
40V
Package / Case :
TO-243AA
Power Dissipation :
2.5W
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
-6V
Transistor Application :
SWITCHING
Published :
2004
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
40V
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
6.35mm
Base Part Number :
PBSS5540
Number of Terminations :
3
Number of Elements :
1
Frequency :
60MHz
Length :
12.7mm
Weight :
4.535924g
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Terminal Form :
Flat
Current - Collector Cutoff (Max) :
100nA ICBO
Width :
6.35mm
Max Power Dissipation :
550mW
Gain Bandwidth Product :
60MHz
ECCN Code :
EAR99
Power - Max :
1.6W
Transistor Type :
PNP
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Max Collector Current :
4A
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 2A 2V
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Max Breakdown Voltage :
40V
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
375mV @ 500mA, 5A
Element Configuration :
Single
Number of Pins :
3
hFE Min :
250
Collector Base Voltage (VCBO) :
40V
Transition Frequency :
60MHz
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Mount :
Surface Mount
Factory Lead Time :
4 Weeks
Datasheets
PBSS5540X,135
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS5540X,135 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Operating Temperature:150°C TJ, Base Part Number:PBSS5540, Number of Terminations:3, Number of Pins:3, Mounting Type:Surface Mount, PBSS5540X,135 pinout, PBSS5540X,135 datasheet PDF, PBSS5540X,135 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS5540X,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS5540X,135


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

PBSS5540X,135 Overview


In this device, the DC current gain is 150 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 375mV @ 500mA, 5A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.60MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.

PBSS5540X,135 Features


the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 375mV @ 500mA, 5A
the emitter base voltage is kept at -6V
a transition frequency of 60MHz


PBSS5540X,135 Applications


There are a lot of Nexperia USA Inc.
PBSS5540X,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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