PBSS5540X,135
- Mfr.Part #
- PBSS5540X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 4A SOT89
- Stock
- 10,899
- In Stock :
- 10,899
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-243AA
- Power Dissipation :
- 2.5W
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- -6V
- Transistor Application :
- SWITCHING
- Published :
- 2004
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 40V
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 6.35mm
- Base Part Number :
- PBSS5540
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Frequency :
- 60MHz
- Length :
- 12.7mm
- Weight :
- 4.535924g
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 6.35mm
- Max Power Dissipation :
- 550mW
- Gain Bandwidth Product :
- 60MHz
- ECCN Code :
- EAR99
- Power - Max :
- 1.6W
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 2V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 40V
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 375mV @ 500mA, 5A
- Element Configuration :
- Single
- Number of Pins :
- 3
- hFE Min :
- 250
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 60MHz
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS5540X,135
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5540X,135 Overview
In this device, the DC current gain is 150 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 375mV @ 500mA, 5A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.60MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
PBSS5540X,135 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 375mV @ 500mA, 5A
the emitter base voltage is kept at -6V
a transition frequency of 60MHz
PBSS5540X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5540X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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