PBSS5520X,135
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- Mfr.Part #
- PBSS5520X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A SOT89
- Stock
- 78,827
- In Stock ：
- 78,827
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 20V
- JESD-30 Code :
- R-PSSO-F3
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- hFE Min :
- 300
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 20V
- Max Collector Current :
- 5A
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Power Dissipation :
- 2.5W
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- Polarity/Channel Type :
- PNP
- Power - Max :
- 1.6W
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -5V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 1.6W
- Max Breakdown Voltage :
- 20V
- Published :
- 2003
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Base Part Number :
- PBSS5520
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Datasheets
- PBSS5520X,135
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5520X,135 Overview
In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 500mA, 5A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
PBSS5520X,135 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
PBSS5520X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5520X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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