PBSS5520X,135
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- Mfr.Part #
- PBSS5520X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A SOT89
- Stock
- 78,827
- In Stock ：
- 78,827
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Power - Max :
- 1.6W
- Max Collector Current :
- 5A
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Number of Pins :
- 4
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation :
- 2.5W
- hFE Min :
- 300
- Base Part Number :
- PBSS5520
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Max Power Dissipation :
- 1.6W
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- Collector Emitter Breakdown Voltage :
- 20V
- Package / Case :
- TO-243AA
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA
- ECCN Code :
- EAR99
- Published :
- 2003
- Element Configuration :
- Single
- Datasheets
- PBSS5520X,135
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5520X,135 Overview
In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 500mA, 5A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
PBSS5520X,135 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
PBSS5520X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5520X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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