PBSS5520X,135

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Mfr.Part #
PBSS5520X,135
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 20V 5A SOT89
Stock
78,827
In Stock :
78,827

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PSSO-F3
Published :
2003
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Base Part Number :
PBSS5520
Number of Pins :
4
Power Dissipation :
2.5W
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 2A 2V
Radiation Hardening :
No
Max Power Dissipation :
1.6W
Transition Frequency :
100MHz
Packaging :
Tape and Reel (TR)
Max Collector Current :
5A
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
20V
Vce Saturation (Max) @ Ib, Ic :
270mV @ 500mA, 5A
Emitter Base Voltage (VEBO) :
-5V
RoHS Status :
ROHS3 Compliant
hFE Min :
300
Power - Max :
1.6W
Polarity/Channel Type :
PNP
Collector Base Voltage (VCBO) :
20V
Number of Terminations :
3
Number of Elements :
1
ECCN Code :
EAR99
Frequency :
100MHz
Collector Emitter Voltage (VCEO) :
20V
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Factory Lead Time :
4 Weeks
Transistor Application :
SWITCHING
Max Breakdown Voltage :
20V
Current - Collector Cutoff (Max) :
100nA
Pin Count :
3
Gain Bandwidth Product :
100MHz
Terminal Form :
Flat
Element Configuration :
Single
Package / Case :
TO-243AA
Case Connection :
COLLECTOR
Datasheets
PBSS5520X,135
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS5520X,135 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PBSS5520, Number of Pins:4, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:TO-243AA, PBSS5520X,135 pinout, PBSS5520X,135 datasheet PDF, PBSS5520X,135 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS5520X,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS5520X,135


PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

PBSS5520X,135 Overview


In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 500mA, 5A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

PBSS5520X,135 Features


the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz


PBSS5520X,135 Applications


There are a lot of Nexperia USA Inc.
PBSS5520X,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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