PBSS5520X,135
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- Mfr.Part #
- PBSS5520X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A SOT89
- Stock
- 78,827
- In Stock ：
- 78,827
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 300
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 20V
- Lead Free :
- Lead Free
- Power Dissipation :
- 2.5W
- Frequency :
- 100MHz
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Power - Max :
- 1.6W
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 20V
- Emitter Base Voltage (VEBO) :
- -5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 20V
- JESD-30 Code :
- R-PSSO-F3
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 5A
- Collector Base Voltage (VCBO) :
- 20V
- Max Power Dissipation :
- 1.6W
- Package / Case :
- TO-243AA
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Published :
- 2003
- Number of Pins :
- 4
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- PBSS5520
- Mount :
- Surface Mount
- Datasheets
- PBSS5520X,135
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5520X,135 Overview
In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 500mA, 5A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
PBSS5520X,135 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
PBSS5520X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5520X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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