PBSS5420D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

1.1W

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2A 2V

Transistor Type :

PNP

Weight :

4.535924g

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

420mV @ 600mA, 6A

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

80MHz

Time@Peak Reflow Temperature-Max (s) :

30

hFE Min :

250

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

20V

Number of Elements :

1

Package / Case :

SC-74, SOT-457

Number of Pins :

6

Pin Count :

6

Power Dissipation :

2.5W

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Height :

6.35mm

Termination :

SMD/SMT

Transistor Application :

SWITCHING

Published :

2008

Base Part Number :

PBSS5420

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Terminations :

6

Collector Base Voltage (VCBO) :

20V

Length :

6.35mm

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Max Collector Current :

4A

Transition Frequency :

80MHz

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

20V

Radiation Hardening :

No

Element Configuration :

Single

Max Breakdown Voltage :

20V

Current - Collector Cutoff (Max) :

100nA

Mounting Type :

Surface Mount

Width :

6.35mm

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Frequency :

80MHz

Max Power Dissipation :

2.5W