PBSS5350T,215
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- Mfr.Part #
- PBSS5350T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS5350T - SMALL S
- Stock
- 34,036
- In Stock ：
- 34,036
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 300mW
- hFE Min :
- 200
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 50V
- Zener Voltage :
- 6.8V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power - Max :
- 540mW
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Max Collector Current :
- 2A
- Published :
- 2002
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Current :
- 2A
- Collector Emitter Voltage (VCEO) :
- 50V
- Element Configuration :
- Single
- Pin Count :
- 3
- Voltage :
- 50V
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Power Dissipation :
- 1.2W
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- PBSS5350
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 50V
- Datasheets
- PBSS5350T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5350T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 390mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5350T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5350T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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