PBSS5330PA,135
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- Mfr.Part #
- PBSS5330PA,135
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- PBSS5330PA - 30 V, 3 A PNP LOW V
- Stock
- 34,949
- In Stock ：
- 34,949
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 320mV
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Turn Off Time-Max (toff) :
- 200ns
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 70ns
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Max Collector Current :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 165MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- 3-PowerUDFN
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 3A 2V
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Published :
- 2015
- Terminal Form :
- NO LEAD
- Transistor Type :
- PNP
- Power - Max :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PDSO-N3
- Max Power Dissipation :
- 500mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- PBSS5330
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 30V
- Datasheets
- PBSS5330PA,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5330PA,135 Overview
In this device, the DC current gain is 100 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 300mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS5330PA,135 Features
the DC current gain for this device is 100 @ 3A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
a transition frequency of 100MHz
PBSS5330PA,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5330PA,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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