PBSS5330PA,135
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- Mfr.Part #
- PBSS5330PA,135
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- PBSS5330PA - 30 V, 3 A PNP LOW V
- Stock
- 34,949
- In Stock ：
- 34,949
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Form :
- NO LEAD
- Operating Temperature :
- 150°C TJ
- Published :
- 2015
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500mW
- Turn Off Time-Max (toff) :
- 200ns
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin (Sn)
- Turn On Time-Max (ton) :
- 70ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Frequency - Transition :
- 165MHz
- Mount :
- Surface Mount
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 320mV
- Base Part Number :
- PBSS5330
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- 3-PowerUDFN
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- JESD-30 Code :
- R-PDSO-N3
- Number of Terminations :
- 3
- Max Collector Current :
- 3A
- Transistor Application :
- SWITCHING
- Power - Max :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 3A 2V
- Max Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Datasheets
- PBSS5330PA,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5330PA,135 Overview
In this device, the DC current gain is 100 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 300mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS5330PA,135 Features
the DC current gain for this device is 100 @ 3A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
a transition frequency of 100MHz
PBSS5330PA,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5330PA,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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