PBSS5330PA,135
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- Mfr.Part #
- PBSS5330PA,135
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- PBSS5330PA - 30 V, 3 A PNP LOW V
- Stock
- 34,949
- In Stock ：
- 34,949
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 320mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Configuration :
- Single
- Max Power Dissipation :
- 500mW
- Turn On Time-Max (ton) :
- 70ns
- JESD-30 Code :
- R-PDSO-N3
- Turn Off Time-Max (toff) :
- 200ns
- Number of Elements :
- 1
- Power - Max :
- 500mW
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 3-PowerUDFN
- Transition Frequency :
- 100MHz
- Base Part Number :
- PBSS5330
- Transistor Element Material :
- SILICON
- Published :
- 2015
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Max Collector Current :
- 3A
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Frequency - Transition :
- 165MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 3A 2V
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- NO LEAD
- Datasheets
- PBSS5330PA,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5330PA,135 Overview
In this device, the DC current gain is 100 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 300mA, 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS5330PA,135 Features
the DC current gain for this device is 100 @ 3A 2V
the vce saturation(Max) is 320mV @ 300mA, 3A
a transition frequency of 100MHz
PBSS5330PA,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5330PA,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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