PBSS5320D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Power Dissipation :

750mW

Transistor Element Material :

SILICON

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Frequency :

100MHz

Collector Emitter Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Terminal Position :

Dual

Additional Feature :

High Reliability

Max Collector Current :

3A

Package / Case :

SC-74, SOT-457

Base Part Number :

PBSS5320

Published :

2009

Collector Base Voltage (VCBO) :

20V

Mount :

Surface Mount

Transition Frequency :

100MHz

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Element Configuration :

Single

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Terminations :

6

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Number of Elements :

1

Contact Plating :

Tin

Gain Bandwidth Product :

100MHz

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Max Power Dissipation :

750mW

Max Breakdown Voltage :

20V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 300mA, 3A

Collector Emitter Voltage (VCEO) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)