PBSS5250X,115
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- Mfr.Part #
- PBSS5250X,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A SOT89
- Stock
- 3,488
- In Stock ：
- 3,488
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Max Collector Current :
- 2A
- Collector Emitter Saturation Voltage :
- 380mV
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Length :
- 4.6mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Transistor Type :
- PNP
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Form :
- Flat
- Package / Case :
- TO-243AA
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Base Part Number :
- PBSS5250
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Height :
- 1.6mm
- Published :
- 2003
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 1W
- hFE Min :
- 200
- Width :
- 2.6mm
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Datasheets
- PBSS5250X,115
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS5250X,115 Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 380mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 2A volts.
PBSS5250X,115 Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5250X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5250X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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