PBSS5230T,215
- Mfr.Part #
- PBSS5230T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A TO236AB
- Stock
- 109,377
- In Stock :
- 109,377
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 2A
- Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- PBSS5230
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Max Power Dissipation :
- 480mW
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 480mW
- Published :
- 2003
- Length :
- 6.35mm
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- JESD-609 Code :
- e3
- Height :
- 6.35mm
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 6.35mm
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 200MHz
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 200MHz
- Datasheets
- PBSS5230T,215

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5230T,215 Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 2A volts.
PBSS5230T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
PBSS5230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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