PBSS5230T,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

6.35mm

Mount :

Surface Mount

Gain Bandwidth Product :

200MHz

Max Breakdown Voltage :

30V

Emitter Base Voltage (VEBO) :

5V

Frequency :

200MHz

Vce Saturation (Max) @ Ib, Ic :

350mV @ 200mA, 2A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.35mm

Pin Count :

3

Contact Plating :

Tin

Number of Elements :

1

Weight :

4.535924g

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Transition Frequency :

200MHz

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Height :

6.35mm

Transistor Type :

PNP

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Operating Temperature :

150°C TJ

Element Configuration :

Single

Base Part Number :

PBSS5230

Lead Free :

Lead Free

Number of Pins :

3

Published :

2003

Max Collector Current :

2A

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

30V

Power Dissipation :

480mW

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

30V

Collector Base Voltage (VCBO) :

30V

Max Power Dissipation :

480mW

Transistor Element Material :

SILICON

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40