PBSS5230T,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Power Dissipation :

480mW

Gain Bandwidth Product :

200MHz

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

Number of Pins :

3

Base Part Number :

PBSS5230

Transistor Application :

SWITCHING

Transition Frequency :

200MHz

Published :

2003

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Breakdown Voltage :

30V

Weight :

4.535924g

Mount :

Surface Mount

Frequency :

200MHz

Operating Temperature :

150°C TJ

Height :

6.35mm

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

30V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

PNP

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Width :

6.35mm

Collector Base Voltage (VCBO) :

30V

Pin Count :

3

Max Collector Current :

2A

Length :

6.35mm

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

350mV @ 200mA, 2A

Max Power Dissipation :

480mW