PBSS5220V,115
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- Mfr.Part #
- PBSS5220V,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A LOW SAT SOT666
- Stock
- 11,090
- In Stock ：
- 11,090
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Lead Free :
- Lead Free
- Package / Case :
- SOT-563, SOT-666
- RoHS Status :
- ROHS3 Compliant
- Length :
- 1.7mm
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Weight :
- 4.535924g
- Mount :
- Surface Mount
- Number of Pins :
- 6
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 20V
- Width :
- 1.3mm
- Terminal Position :
- Dual
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 6
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 20V
- Frequency :
- 185MHz
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Transition Frequency :
- 185MHz
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 200mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 155 @ 1A 2V
- Base Part Number :
- PBSS5220
- Gain Bandwidth Product :
- 185MHz
- REACH SVHC :
- No SVHC
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Height :
- 600μm
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 6
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Power Dissipation :
- 900mW
- Max Power Dissipation :
- 900mW
- Collector Emitter Voltage (VCEO) :
- 20V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 455mV
- Datasheets
- PBSS5220V,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS5220V,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 155 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 455mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 390mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 185MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
PBSS5220V,115 Features
the DC current gain for this device is 155 @ 1A 2V
a collector emitter saturation voltage of 455mV
the vce saturation(Max) is 390mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 185MHz
PBSS5220V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5220V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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