PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Collector Emitter Voltage (VCEO) :
- 20V
- Frequency :
- 100MHz
- Power Dissipation :
- 480mW
- Base Part Number :
- PBSS5220
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 480mW
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Length :
- 6.35mm
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Published :
- 2009
- Width :
- 6.35mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Height :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 225
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 20V
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Weight :
- 4.535924g
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 20V
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Max Breakdown Voltage :
- 20V
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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