PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 6.35mm
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 4.535924g
- Frequency :
- 100MHz
- Width :
- 6.35mm
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 20V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 20V
- hFE Min :
- 225
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Collector Current :
- 2A
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 480mW
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 480mW
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 20V
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Base Part Number :
- PBSS5220
- Number of Pins :
- 3
- Height :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 20V
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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