PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 20V
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Max Power Dissipation :
- 480mW
- Collector Emitter Breakdown Voltage :
- 20V
- Pin Count :
- 3
- Base Part Number :
- PBSS5220
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 225
- Terminal Form :
- Gull wing
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Height :
- 6.35mm
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 20V
- Width :
- 6.35mm
- Max Breakdown Voltage :
- 20V
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 480mW
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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