PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 20V
- Length :
- 6.35mm
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2009
- Max Collector Current :
- 2A
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Max Power Dissipation :
- 480mW
- Collector Emitter Voltage (VCEO) :
- 20V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 20V
- Base Part Number :
- PBSS5220
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Width :
- 6.35mm
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Height :
- 6.35mm
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 225
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- Power Dissipation :
- 480mW
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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