PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS5220T - SMALL SIGNA
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Power Dissipation :
- 480mW
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.35mm
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 20V
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Max Power Dissipation :
- 480mW
- Length :
- 6.35mm
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- PBSS5220
- hFE Min :
- 225
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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