PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS5220T - SMALL SIGNA
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 6.35mm
- Max Power Dissipation :
- 480mW
- Width :
- 6.35mm
- Gain Bandwidth Product :
- 100MHz
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Length :
- 6.35mm
- Mounting Type :
- Surface Mount
- Base Part Number :
- PBSS5220
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 20V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 480mW
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- hFE Min :
- 225
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 20V
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 20V
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Max Collector Current :
- 2A
- Number of Pins :
- 3
- Pin Count :
- 3
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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