PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS5220T - SMALL SIGNA
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 480mW
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Height :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 225
- Mount :
- Surface Mount
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Length :
- 6.35mm
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Width :
- 6.35mm
- Published :
- 2009
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 2A
- Max Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PBSS5220
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 20V
- Collector Emitter Breakdown Voltage :
- 20V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 480mW
- Number of Terminations :
- 3
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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