PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS5220T - SMALL SIGNA
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 480mW
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 6.35mm
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 20V
- JESD-609 Code :
- e3
- hFE Min :
- 225
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Height :
- 6.35mm
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage :
- 20V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Published :
- 2009
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 2A
- Base Part Number :
- PBSS5220
- Factory Lead Time :
- 4 Weeks
- Length :
- 6.35mm
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 480mW
- Collector Emitter Voltage (VCEO) :
- 20V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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