PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA PBSS5220T - SMALL SIGNA
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Number of Elements :
- 1
- Max Power Dissipation :
- 480mW
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Power Dissipation :
- 480mW
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Base Part Number :
- PBSS5220
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 225
- Width :
- 6.35mm
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Max Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- 20V
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Height :
- 6.35mm
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 20V
- Collector Emitter Breakdown Voltage :
- 20V
- Max Collector Current :
- 2A
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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