PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A TO236AB
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 20V
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 225
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Base Part Number :
- PBSS5220
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 480mW
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 20V
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.35mm
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.35mm
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Height :
- 6.35mm
- Power Dissipation :
- 480mW
- Collector Emitter Voltage (VCEO) :
- 20V
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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