PBSS5220T,215
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- Mfr.Part #
- PBSS5220T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A TO236AB
- Stock
- 166,911
- In Stock ：
- 166,911
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Length :
- 6.35mm
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Max Collector Current :
- 2A
- hFE Min :
- 225
- Collector Emitter Breakdown Voltage :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 6.35mm
- Max Breakdown Voltage :
- 20V
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 480mW
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Base Part Number :
- PBSS5220
- Width :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Collector Emitter Voltage (VCEO) :
- 20V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 200mA, 2A
- Max Power Dissipation :
- 480mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 20V
- Datasheets
- PBSS5220T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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