PBSS5160V,115
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- Mfr.Part #
- PBSS5160V,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A LOW SAT SOT666
- Stock
- 3,576
- In Stock ：
- 3,576
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Number of Pins :
- 6
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 500mW
- Transition Frequency :
- 220MHz
- Current - Collector (Ic) (Max) :
- 900mA
- Max Collector Current :
- 1A
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 220MHz
- Power Dissipation :
- 500mW
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Package / Case :
- SOT-563, SOT-666
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Pin Count :
- 6
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 6
- Base Part Number :
- PBSS5160
- Published :
- 2009
- Max Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 220MHz
- Datasheets
- PBSS5160V,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS5160V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 330mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 220MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
PBSS5160V,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS5160V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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