PBSS5160V,115
- Mfr.Part #
- PBSS5160V,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A LOW SAT SOT666
- Stock
- 3,576
- In Stock :
- 3,576
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Power Dissipation :
- 500mW
- Gain Bandwidth Product :
- 220MHz
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector (Ic) (Max) :
- 900mA
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Base Part Number :
- PBSS5160
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Package / Case :
- SOT-563, SOT-666
- Transition Frequency :
- 220MHz
- Frequency :
- 220MHz
- Terminal Form :
- Flat
- Number of Pins :
- 6
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 60V
- Pin Count :
- 6
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- PBSS5160V,115

PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS5160V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 330mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 220MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
PBSS5160V,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS5160V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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