PBSS5160V,115
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- Mfr.Part #
- PBSS5160V,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A LOW SAT SOT666
- Stock
- 3,576
- In Stock ：
- 3,576
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- Max Breakdown Voltage :
- 60V
- Frequency :
- 220MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Current - Collector (Ic) (Max) :
- 900mA
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- SOT-563, SOT-666
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 6
- Element Configuration :
- Single
- Base Part Number :
- PBSS5160
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 500mW
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 500mW
- Gain Bandwidth Product :
- 220MHz
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Pin Count :
- 6
- Transition Frequency :
- 220MHz
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- PBSS5160V,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS5160V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 330mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 220MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
PBSS5160V,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS5160V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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