PBSS5160T,215
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- Mfr.Part #
- PBSS5160T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT23
- Stock
- 221,402
- In Stock ：
- 221,402
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 6.35mm
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- PNP
- Length :
- 6.35mm
- Frequency :
- 220MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 200
- Gain Bandwidth Product :
- 220MHz
- Power - Max :
- 400mW
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 4.535924g
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 220MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.25W
- Base Part Number :
- PBSS5160
- Width :
- 6.35mm
- Max Power Dissipation :
- 270mW
- Datasheets
- PBSS5160T,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5160T,215 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 330mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
PBSS5160T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5160T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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