PBSS5160QAZ
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- Mfr.Part #
- PBSS5160QAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A DFN1010D-3
- Stock
- 6,515
- In Stock ：
- 6,515
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 325mW
- Max Collector Current :
- 1A
- Number of Pins :
- 3
- Pin Count :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 325mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- PBSS5160
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2013
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 460mV @ 50mA, 1A
- Package / Case :
- 3-XDFN Exposed Pad
- Frequency - Transition :
- 150MHz
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 460mV
- Datasheets
- PBSS5160QAZ
PNP 150°C TJ 100nA ICBO 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
PBSS5160QAZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 85 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
PBSS5160QAZ Features
the DC current gain for this device is 85 @ 1A 2V
the vce saturation(Max) is 460mV @ 50mA, 1A
PBSS5160QAZ Applications
There are a lot of Nexperia USA Inc.
PBSS5160QAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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