PBSS5160PAP115
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- Mfr.Part #
- PBSS5160PAP115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS5160PAP - SMALL
- Stock
- 9,057
- In Stock ：
- 9,057
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Packaging :
- Cut Tape (CT)
- Gain Bandwidth Product :
- 125MHz
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- -60V
- Transistor Type :
- 2 PNP (Dual)
- Collector Emitter Saturation Voltage :
- -125mV
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- -60V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Dual
- Max Collector Current :
- -1.5A
- Published :
- 2013
- hFE Min :
- 170
- Polarity :
- PNP
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Package / Case :
- 6-UDFN Exposed Pad
- Emitter Base Voltage (VEBO) :
- -7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Power - Max :
- 510mW
- Pin Count :
- 6
- Max Power Dissipation :
- 1.45W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Number of Pins :
- 6
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Datasheets
- PBSS5160PAP115
PBSS5160PAP115 Documents
Specialized ICs NXP Semiconductors PBSS5160PAP115 Overview
The Specialized ICs NXP Semiconductors PBSS5160PAP115 represents a state-of-the-art solution in the realm of Bipolar (BJT) transistor arrays. Designed and manufactured by NXP Semiconductors, a leader in semiconductor innovation, this product stands out for its robust performance and reliability in demanding applications. This array features multiple transistors with outstanding switching and amplification capabilities, optimized for efficient operation across a broad range of temperatures and voltages. Its high current gain and low saturation voltage ensure superior performance, making it an ideal choice for high-performance circuits.
Key Features
The PBSS5160PAP115 includes several key features that make it particularly valuable for advanced electronic designs. These include high current capacity, excellent gain linearity, and low power dissipation, which enhance overall circuit efficiency and durability. The device also boasts a compact package, facilitating easier integration into space-constrained applications without sacrificing performance. Enhanced thermal management characteristics ensure reliable operation under varying environmental conditions.
Applications
Due to its versatile performance characteristics, the Specialized ICs NXP Semiconductors PBSS5160PAP115 is widely used in a variety of applications. It is particularly suited for power management systems, signal processing, automotive modules, and renewable energy solutions. Additionally, its robust design makes it an excellent choice for industrial applications requiring high reliability and extended operational life, such as in automation and control systems.
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