PBSS5160DS,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Published :

2005

Surface Mount :

yes

Height :

1.1mm

Power Dissipation :

290mW

Transistor Type :

2 PNP (Dual)

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA

Ambient Temperature Range High :

150°C

Emitter Base Voltage (VEBO) :

-5V

Transistor Element Material :

SILICON

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 5V

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

770mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

-80V

Max Collector Current :

-1A

Base Part Number :

PBSS5160DS

Transition Frequency :

220MHz

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

60V

Number of Pins :

6

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

-60V

Gain Bandwidth Product :

185MHz

Vce Saturation (Max) @ Ib, Ic :

330mV @ 100mA, 1A

Polarity :

PNP

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

Max Junction Temperature (Tj) :

150°C

Package / Case :

SC-74, SOT-457

Factory Lead Time :

4 Weeks

Number of Terminations :

6

Power - Max :

420mW

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

-250mV

hFE Min :

100

Operating Temperature :

150°C TJ