PBSS5160DS,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Voltage - Collector Emitter Breakdown (Max) :

60V

Surface Mount :

yes

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Transistor Type :

2 PNP (Dual)

Base Part Number :

PBSS5160DS

Packaging :

Tape and Reel (TR)

Ambient Temperature Range High :

150°C

Collector Base Voltage (VCBO) :

-80V

Pin Count :

6

Number of Elements :

2

Number of Terminations :

6

Transition Frequency :

220MHz

Emitter Base Voltage (VEBO) :

-5V

Collector Emitter Saturation Voltage :

-250mV

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Current - Collector (Ic) (Max) :

770mA

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

330mV @ 100mA, 1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 5V

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Number of Pins :

6

Height :

1.1mm

ECCN Code :

EAR99

Gain Bandwidth Product :

185MHz

Published :

2005

hFE Min :

100

Max Collector Current :

-1A

Peak Reflow Temperature (Cel) :

260

Polarity :

PNP

Current - Collector Cutoff (Max) :

100nA

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

-60V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

SC-74, SOT-457

Power - Max :

420mW

Power Dissipation :

290mW

Operating Temperature :

150°C TJ