PBSS5160DS,115
- Mfr.Part #
- PBSS5160DS,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS 2PNP 60V 0.77A 6TSOP
- Stock
- 44,541
- In Stock :
- 44,541
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Collector Emitter Voltage (VCEO) :
- -60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Polarity :
- PNP
- Max Collector Current :
- -1A
- Gain Bandwidth Product :
- 185MHz
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Pin Count :
- 6
- Power - Max :
- 420mW
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -80V
- Package / Case :
- SC-74, SOT-457
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 6
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 220MHz
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 100
- Max Junction Temperature (Tj) :
- 150°C
- Ambient Temperature Range High :
- 150°C
- Transistor Type :
- 2 PNP (Dual)
- Number of Elements :
- 2
- Emitter Base Voltage (VEBO) :
- -5V
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.1mm
- Published :
- 2005
- Base Part Number :
- PBSS5160DS
- Current - Collector (Ic) (Max) :
- 770mA
- ECCN Code :
- EAR99
- Number of Terminations :
- 6
- Collector Emitter Saturation Voltage :
- -250mV
- Power Dissipation :
- 290mW
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-609 Code :
- e3
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Datasheets
- PBSS5160DS,115
PBSS5160DS,115 Documents

PBSS5160DS,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
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