PBSS5160DS,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Collector Emitter Voltage (VCEO) :

-60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA 5V

Polarity :

PNP

Max Collector Current :

-1A

Gain Bandwidth Product :

185MHz

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

330mV @ 100mA, 1A

Pin Count :

6

Power - Max :

420mW

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

-80V

Package / Case :

SC-74, SOT-457

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

6

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Transition Frequency :

220MHz

Terminal Form :

Gull wing

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

hFE Min :

100

Max Junction Temperature (Tj) :

150°C

Ambient Temperature Range High :

150°C

Transistor Type :

2 PNP (Dual)

Number of Elements :

2

Emitter Base Voltage (VEBO) :

-5V

Peak Reflow Temperature (Cel) :

260

Height :

1.1mm

Published :

2005

Base Part Number :

PBSS5160DS

Current - Collector (Ic) (Max) :

770mA

ECCN Code :

EAR99

Number of Terminations :

6

Collector Emitter Saturation Voltage :

-250mV

Power Dissipation :

290mW

Current - Collector Cutoff (Max) :

100nA

JESD-609 Code :

e3

Voltage - Collector Emitter Breakdown (Max) :

60V