PBSS5140U,115
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- Mfr.Part #
- PBSS5140U,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A SOT323
- Stock
- 45,885
- In Stock ：
- 45,885
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Base Part Number :
- PBSS5140
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 350mW
- Max Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Transition Frequency :
- 150MHz
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Additional Feature :
- High Reliability
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 40V
- hFE Min :
- 300
- Frequency :
- 150MHz
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- PBSS5140U,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PBSS5140U,115 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS5140U,115 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS5140U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5140U,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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