PBSS5140T,215
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- Mfr.Part #
- PBSS5140T,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A SOT23
- Stock
- 149,002
- In Stock ：
- 149,002
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Number of Pins :
- 3
- Published :
- 2001
- Peak Reflow Temperature (Cel) :
- 260
- Frequency - Transition :
- 150MHz
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Power - Max :
- 450mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Base Part Number :
- PBSS5140
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Transistor Type :
- PNP
- Transition Frequency :
- 150MHz
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Current - Collector (Ic) (Max) :
- 1A
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Datasheets
- PBSS5140T,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5140T,215 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
PBSS5140T,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 150MHz
PBSS5140T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5140T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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