PBSS5112PAP,115
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- Mfr.Part #
- PBSS5112PAP,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA PBSS5112PAP - SMALL SIG
- Stock
- 6,000
- In Stock ：
- 6,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 2V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- 6-UDFN Exposed Pad
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- -1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PBSS5112
- Mount :
- Surface Mount
- Power - Max :
- 510mW
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 1A
- Factory Lead Time :
- 8 Weeks
- hFE Min :
- 190
- Packaging :
- Cut Tape (CT)
- Element Configuration :
- Dual
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Base Voltage (VCBO) :
- -120V
- Transistor Type :
- 2 PNP (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 480mV @ 100mA, 1A
- Max Power Dissipation :
- 1.45W
- Collector Emitter Voltage (VCEO) :
- -120V
- Number of Pins :
- 6
- Pin Count :
- 6
- Terminal Finish :
- Tin (Sn)
- Published :
- 2012
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity :
- PNP
- Collector Emitter Saturation Voltage :
- -150mV
- Datasheets
- PBSS5112PAP,115
PBSS5112PAP,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
The Nexperia PBSS5112PAP,115 is designed for use in a variety of applications, including power management, audio amplifiers, and motor control. It is also suitable for use in automotive applications, as it is AEC-Q101 qualified. The array features low saturation voltage, low on-resistance, and low power consumption. It also has a high switching speed and a wide operating temperature range.
The Nexperia PBSS5112PAP,115 is a reliable and efficient transistor array that is suitable for a variety of applications. It is designed to provide high performance and reliability in a wide range of operating conditions.
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