PBSS4612PA,115

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Mfr.Part #
PBSS4612PA,115
Manufacturer
Nexperia
Package / Case
3-PowerUDFN
Datasheet
Download
Description
TRANS NPN 12V 6A 3HUSON
Stock
15,011
In Stock :
15,011

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
260 @ 2A 2V
Max Collector Current :
6A
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
12V
Transistor Element Material :
SILICON
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
100nA
Gain Bandwidth Product :
80MHz
Radiation Hardening :
No
Factory Lead Time :
8 Weeks
Case Connection :
COLLECTOR
Turn On Time-Max (ton) :
80ns
Vce Saturation (Max) @ Ib, Ic :
275mV @ 300mA, 6A
Number of Elements :
1
Element Configuration :
Single
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
2.1W
Mounting Type :
Surface Mount
Published :
2010
Mount :
Surface Mount
JESD-609 Code :
e3
Number of Pins :
3
Emitter Base Voltage (VEBO) :
6V
Operating Temperature :
150°C TJ
Pin Count :
3
Package / Case :
3-PowerUDFN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
2.1W
Packaging :
Tape and Reel (TR)
Collector Emitter Voltage (VCEO) :
12V
hFE Min :
200
Transition Frequency :
80MHz
Terminal Position :
Dual
Base Part Number :
PBSS4612
Transistor Type :
NPN
Max Breakdown Voltage :
12V
Terminal Finish :
Tin (Sn)
Collector Base Voltage (VCBO) :
12V
Datasheets
PBSS4612PA,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4612PA,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:3-PowerUDFN, Base Part Number:PBSS4612, PBSS4612PA,115 pinout, PBSS4612PA,115 datasheet PDF, PBSS4612PA,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4612PA,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4612PA,115


NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount

PBSS4612PA,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 260 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 275mV @ 300mA, 6A.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 80MHz.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.

PBSS4612PA,115 Features


the DC current gain for this device is 260 @ 2A 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 80MHz


PBSS4612PA,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4612PA,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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