PBSS4540Z115
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- Mfr.Part #
- PBSS4540Z115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4540Z - 40 V LO
- Stock
- 15,123
- In Stock ：
- 15,123
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Surface Mount :
- yes
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 2W
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Base Part Number :
- PBSS4540
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 5A
- Frequency - Transition :
- 130MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 355mV @ 500mA, 5A
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 130MHz
- Number of Pins :
- 4
- Pin Count :
- 4
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Published :
- 2001
- Datasheets
- PBSS4540Z115
Specialized ICs NXP Semiconductors PBSS4540Z115 Overview
The Specialized ICs NXP Semiconductors PBSS4540Z115 is an advanced silicon NPN transistor designed for high performance in a compact TO-261-4, TO-261AA package. This device is engineered to deliver superior thermal stability with a maximum junction temperature (TJ) of 150°C, which ensures reliable operation under extreme conditions. The transistor features a very low collector-base leakage current (ICBO) of just 100nA, making it ideal for sensitive electronic applications. It supports a collector-emitter breakdown voltage of 40V, which allows it to handle significant power levels in various circuits. The low VCE saturation of 355mV at currents up to 5A combined with a high DC current gain of 250 at 2A 2V make this transistor a highly efficient choice for amplification and switching applications.
Key Features
- High DC current gain of 250 @ 2A 2V
- Low VCE saturation (Max) of 355mV @ 500mA, 5A
- High transition frequency of 130MHz, enhancing performance in high-frequency applications
- Robust thermal performance with a maximum operating temperature of 150°C
- Compact and robust TO-261-4, TO-261AA package suitable for surface mounting
Applications
The Specialized ICs NXP Semiconductors PBSS4540Z115 is versatile in application due to its robust design and high performance specifications. Common uses include:
- Power regulation inverter circuits
- Interface and signal conversion
- Driving motors and actuators
- Muting circuits in audio applications
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