PBSS4440D,115
- Mfr.Part #
- PBSS4440D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A 6TSOP
- Stock
- 63,480
- In Stock :
- 63,480
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Termination :
- SMD/SMT
- Mount :
- Surface Mount
- Width :
- 6.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Terminations :
- 6
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 40V
- Base Part Number :
- PBSS4440
- Gain Bandwidth Product :
- 150MHz
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4A
- Power Dissipation :
- 2.5W
- Number of Pins :
- 6
- Pin Count :
- 6
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 40V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Length :
- 6.35mm
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 300
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 600mA, 6A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Max Power Dissipation :
- 2.5W
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- Dual
- Power - Max :
- 1.1W
- Terminal Form :
- Gull wing
- Height :
- 6.35mm
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Package / Case :
- SC-74, SOT-457
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PBSS4440D,115

NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4440D,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 4A volts.
PBSS4440D,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4440D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4440D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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